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BZX84C15LT1G

BZX84C15LT1G资料
BZX84C15LT1G
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File Size : 116 KB
Manufacturer:ON
Description:DEVICE OPERATIONS The following operations can be performed using the appropriate bus cycles: Read Array (Random, and Page Modes), Write command, Output Dis- able, Standby, Reset/Power Down and Block Locking. See Table 8. Read. Read operations are used to output the contents of the Memory Array, the Electronic Sig- nature, the Status Register, the CFI, the Block Protection Status or the Configuration Register status. Read operation of the memory array is per- formed in asynchronous page mode, that provides fast access time. Data is internally read and stored in a page buffer. The page has a size of 4 words and is addressed by A0-A1 address inputs. Read operations of the Electronic Signature, the Status Register, the CFI, the Block Protection Status, the Configuration Register status and the Security Code are performed as single asyncronous read cycles (Random Read). Both Chip Enable E and Output Enable G must be at VIL in order to read the output of the memory. Write. Write operations are used to give Instruc- tion Commands to the memory or to latch Input Data to be programmed. A write operation is initi- ated when Chip Enable E and Write Enable W are at V IL with Output Enable G at VIH. Addresses are latched on the falling edge of W or E whichever oc- curs last. Commands and Input Data are latched on the rising edge of W or E whichever occurs first. Noise pulses of less than 5ns typical on E, W and G signals do not start a write cycle.
 
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型 号:BZX84C15LT1G
厂 家:ON
封 装:2009
批 号:65000
数 量:SOT-23
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