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| CHA3216K4-121N资料 | |
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CHA3216K4-121N PDF Download |
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File Size : 116 KB
Manufacturer: Description:Notes: 4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V. 5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 6. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 7. This parameter is guaranteed by design and is not tested. 8. The internal Write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a Write, and the transition of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：CHA3216K4-121N 厂 家： 封 装：08＋ 批 号：15000 数 量： 说 明：原装现货 |
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