|
|||||||
|
|||||||
|
|
|
|||||||
|
|||||||
|
|
| CSTCE16MOV53-RO资料 | |
|
CSTCE16MOV53-RO PDF Download |
|
File Size : 116 KB
Manufacturer:MURATA Description:A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus, provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. During the second clock, a subsequent operation (Read/Write/Deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output will tri-state following the next clock rise. |
|
| 相关型号 | |
| ◆ STM32H745ZIT6 | |
| ◆ FT838NB1-RT | |
| ◆ AO4485 | |
| ◆ RFANT5220110A0T | |
| ◆ RFANT3216120A5T | |
| ◆ P13-I39606 | |
| ◆ DF30FC-40DS-0.4V(82) | |
| ◆ JS202011SCQN | |
| ◆ 2041119-1 | |
| ◆ 541044031 | |
| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
|
型 号：CSTCE16MOV53-RO 厂 家：MURATA 封 装：08＋无铅 批 号：4871 数 量： 说 明：原装现货 |
|||||
|
运 费： 所在地： 新旧程度： |
|||||
| 联系人：林小姐 |
| 电 话：0755-83041767,82716726 |
| 手 机：13570833454 |
| QQ：133289964,506456591,1062431938 |
| MSN：RFDZ0754@126.COM |
| 传 真：0755-82716726 |
| EMail：rxdz0754HK@126.com |
| 公司地址： 深圳市福田区华强北佳和大厦4C143 |
技术支持:维库电子市场网