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| HMZ321611T-500Y资料 | |
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HMZ321611T-500Y PDF Download |
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File Size : 116 KB
Manufacturer: Description: Strap:see Note 4 Notes: 1. DQ-to-I/O wiring may be changed within a byte 2. DQ/DQS/DM/CKE/CS relationships must be maintained as shown. 3. DQ/DQS resistors should be 22 Ohms. 4. VDDID strap connections(for memory device VDD, VDDQ); Strap out :(open) : VDD=VDDQ Strap In (Vss) : VDD=VDDQ 5. SDRAM placement alternates btw the back and front sides for the DIMM 6. Address and control resistors should be 22 Ohms |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：HMZ321611T-500Y 厂 家： 封 装：08＋ 批 号：12500 数 量： 说 明：原装现货 |
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