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| MEM2012TC151T001资料 | |
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MEM2012TC151T001 PDF Download |
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File Size : 116 KB
Manufacturer: Description:Offered in 128Mx8bit the K9F1G08X0A is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200µs on the 2112-byte page and an erase operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 30ns(50ns with 1.8V device) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08X0As extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08X0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：MEM2012TC151T001 厂 家： 封 装：08＋无铅 批 号：25470 数 量： 说 明：原装现货 |
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