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MMZ1608D050CTA1N

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MMZ1608D050CTA1N
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Description:  These N-Channel power MOSFETs   are manufactured using the   innovative UltraFET™ process.   This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.
 
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  1PCS 100PCS 1K 10K  
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型 号:MMZ1608D050CTA1N
厂 家:
封 装:08+
批 号:970000
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说 明:原装现货
 
 
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