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MMZ1608D050CTA1N资料 | |
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MMZ1608D050CTA1N PDF Download |
File Size : 116 KB
Manufacturer: Description: These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. |
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1PCS | 100PCS | 1K | 10K | ||
价 格 | |||||
型 号:MMZ1608D050CTA1N 厂 家: 封 装:08+ 批 号:970000 数 量: 说 明:原装现货 |
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运 费: 所在地: 新旧程度: |
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联系人:林小姐 |
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公司地址: 深圳市福田区华强北佳和大厦4C143 |