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| RF071M2S资料 | |
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RF071M2S PDF Download |
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File Size : 116 KB
Manufacturer:ROHM Description:Stanford Microdevices RF071M2S is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe HBT process makes the RF071M2S a very cost-effective solution for applications requiring high linearity at moderate biasing levels. This application note illustrates several application circuits for key frequency bands in the 800-2500 MHz spectrum. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：RF071M2S 厂 家：ROHM 封 装：2009 批 号：65000 数 量：SOD-123 说 明： |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
| 电 话：0755-83041767,82716726 |
| 手 机：13570833454 |
| QQ：133289964,506456591,1062431938 |
| MSN：RFDZ0754@126.COM |
| 传 真：0755-82716726 |
| EMail：rxdz0754HK@126.com |
| 公司地址： 深圳市福田区华强北佳和大厦4C143 |
技术支持:维库电子市场网