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| SFHG42PS101资料 | |
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SFHG42PS101 PDF Download |
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File Size : 116 KB
Manufacturer:SAMSUN Description:The SRAM is capable of writing, reading, and retaining stored data during and after exposure to a transient ionizing radiation pulse up to the transient dose rate upset specification, when applied under recommended operat- ing conditions. To ensure validity of all specified perfor- mance parameters before, during, and after radiation (timing degradation during transient pulse radiation (tim- ing degradation during transient pulse radiation is 10%), it is suggested that stiffening capacitance be placed on or near the package VDD and VSS, with a maximum induc- tance between the package (chip) and stiffening capaci- tance of 0.7 nH per part. If there are no operate-through or valid stored data requirements, typical circuit board mounted de-coupling capacitors are recommended. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：SFHG42PS101 厂 家：SAMSUN 封 装：SMD 批 号：09+ 数 量：3500 说 明：原装现货 |
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运 费： 所在地： 新旧程度： |
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| 联系人：林小姐 |
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